The growing demand for high power density is pushing developers to adopt 1500 V DC connections in their applications to increase the rated power of the inverter and reduce system costs. However, 1500 V DC-based systems also pose more challenges to system design, such as fast switching at high DC voltages, which usually requires a multi-stage topology. This leads to a complex design and a relatively large number of components. To meet this challenge, Infineon Technologies AG introduced its extended CoolSiC a portfolio of high voltage solutions to provide the foundation for the next generation photovoltaic, EV chargingand energy storage systems.

CoolSiC’s extended portfolio offers 2 kV silicon carbide (SiC) MOSFET, along with 2 kV SiC diode for applications up to 1500 V DC. The new SiC MOSFET combines both low switching losses and high blocking voltage in one device, which can optimally meet the requirements of 1500 V DC systems. The new 2 kV CoolSiC technology offers low source drain resistance (R DS (included)) value. In addition, the robust housing diode is suitable for solid switching. The technology allows for a sufficient margin of overvoltage and offers ten times lower FIT speeds caused by cosmic rays compared to the 1700 V SiC MOSFET. In addition, the extended operating voltage range of the gate makes the devices easy to use.

This new SiC MOSFET chip is based on Infineon’s advanced SiC MOSFET technology called M1H, which was recently introduced. Recent advances allow for a significantly larger gate voltage window, which improves the on-voltage resistance for a given matrix size. At the same time, the larger gate voltage window provides high resistance to voltage peaks related to the driver and gate layout, without any restrictions even at high switching frequencies. Infineon offers a range of EiceDRIVER port drivers with functional isolation up to 2.3 kV to support the 2 kV SiC MOSFET.

Samples of 2 kV CoolSiC MOSFETs are now available in EasyPACK 3B and 62 mm modules, and later in the new high-voltage discrete package TO247-PLUS. In addition, Infineon offers a designed 2.3 kV EiceDRIVER ecosystem with insulation capability. The start of production of Easy 3B (DF4-19MR20W3M1HF_B11), a power supply module with 4 amplifier circuits that act as an MPPT stage on a 1500 V PV inverter, is planned for Q3 2022, with a 62 mm module in a half-bridge configuration (3, 4, 6 mΩ), which follow in the fourth quarter of 2022. Discrete devices use the latest awards. XT interconnect technology will be available by the end of 2022.

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2-kV SiC MOSFETs feature low losses, hard switching capability

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