“The growing demand for high power density is forcing developers to adopt 1500V DC connections in their applications,” according to the company. “However, systems based on 1500V DC pose more challenges in system design, which usually requires a multi-stage topology, leading to complex designs.”

TO247-Plus package with 14 mm creep and 5.5 mm clearance

In addition to higher voltages than its 1.7 kV SiC mosfet, the company claims ten times lower FIT speeds caused by cosmic rays, tested everywhere between 1.3 and 1.7 kV, and the diode on the MOSFET housing is sturdy enough for difficult switching, he added.

Infineon 2kV SiC mosfet 10-year graphics on the gateThe safe working area of ​​the gate has been expanded (to the left) compared to the earlier parts, which previously had a bite from the lower right corner and only expanded to -7V with some parts.

They are based on the recent M1H SiC process. “Progress allows for a significantly larger gate voltage window, which improves the resistance at a given matrix size,” it said. “At the same time, the larger gate voltage window provides resistance to driver voltage peaks and port layout, without any restrictions even at high switching frequencies.

The 2kV parts will first be available in 19mΩ 40A form, with four MOSFETs and four diodes in one EasyPack 3B package for 1.5kV photovoltaic inverters (part DF4-19MR20W3M1HF_B11, samples now and production in Q3).

This is followed by 3, 4 and 6 mΩ matrices, in pairs as half-bridges in 62 mm modules for traction inverters, charging of electric vehicles and circuit breakers. (parts FF3 .., FF4 .. and FF6MR20KM1H, samples now and production in Q4).

Discrete MOSFETs and diodes in the TO247-Plus package shown above are coming later this year.

The 2kV parts were announced at PCIM in Nuremberg – find Infineon at booth 412 in Hall 7.

PCIM: 2kV SiC mosfets from Infineon

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