Efficient Power Conversion Corporation expands the choice of ready-made low-voltage transistors with gallium nitride with the introduction of EPC2071 (1.7 mΩ typical, 100 V) GaN FET.
The EPC2071 is ideal for applications with high performance requirements with high power density, including 48 V – 54 V DC-DC input for new servers and artificial intelligence. Lower port charges, QGD and zero recovery losses allow high frequency operations of 1 MHz and higher and high efficiency with a small footprint of 10.2 mm2 for state-of-the-art power density.
The EPC2071 is ideal for BLDC motor drives, including electronic bicycles, electronic scooters, robots, drones and power tools. EPC2071 is 1/3 the size of the silicon MOSFET with the same RDS (on), QG is 1/4 the size of the MOSFET, and the dead time can be reduced from 500 ns to 20 ns to optimize engine efficiency plus the inverter and reduce acoustic noise.
EPC2071 is compatible with the previous generation 4 family of EPC products: EPC2021, EPC2022 and EPC2206. The Generation 5 upgrade in Area x RDS (on) gives the EPC2071 the same power-on resistance as the previous generation with 26% smaller size.
The EPC9174 reference design board is 1.2 kW, 48 V input to 12 V output LLC converter. It includes EPC2071 for primary side full axle. The EPC2071 allows a switching frequency of 1 MHz and 1.2 kW of power in a small size of 22.9 mm x 58.4 mm x 10 mm (power density 1472 W / in3). The peak efficiency is 97.3% at 550 W and the total load efficiency of 96.3% at 12 V, providing 100 A output.
The EPC2071 eGaN FET is priced at 1K u / reel at $ 3.81 each. The EPC9174 development board is priced at $ 498.00 / each. Both EPC2071 and EPC9174 demo boards are available for immediate delivery from Digi-Key.