Munich, Germany – May 10, 2022 – The growing demand for high power density is forcing developers to adopt 1500 V DC connection in their applications to increase the rated power of the inverter and reduce system costs. However, 1500 V DC-based systems also pose more challenges in system design, such as fast switching at high DC voltages, which usually requires a multi-stage topology. This leads to a complex design and a relatively large number of components. To meet this challenge, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today unveiled its expanded CoolSiC portfolio of high-voltage solutions to provide the foundation for the next generation of photovoltaic, EV charging and energy storage systems. .

CoolSiC’s extended portfolio offers a 2 kV silicon carbide (SiC) MOSFET, along with a 2kV SiC diode for applications up to 1500 V DC. The new SiC MOSFET combines both low switching losses and high blocking voltage in one device, which can optimally meet the requirements of 1500 V DC systems. The new 2 kV CoolSiC technology offers a low resistance source (R DS (on)). In addition, the robust housing diode is suitable for solid switching. The technology allows a sufficient surge limit and offers ten times lower FIT velocity caused by cosmic rays compared to the 1700 V SiC MOSFET. In addition, the extended operating voltage range of the gate makes the devices easy to use.

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This new SiC MOSFET chip is based on Infineon’s advanced SiC MOSFET technology called M1H, which was recently introduced. Recent advances allow for a significantly larger gate voltage window, which improves the on-voltage resistance for a given matrix size. At the same time, the larger gate voltage window provides high resistance to gate voltage peaks related to the driver and layout, without any restrictions even at high switching frequencies. Infineon offers a range of EiceDRIVER дра port drivers with functional isolation up to 2.3 kV to support the 2 kV SiC MOSFET.

Availability

Samples of 2 kV CoolSiC MOSFETs are now available in EasyPACK ™ 3B and 62 mm modules, and later in the new high-voltage discrete package TO247-PLUS. In addition, Infineon offers a designed 2.3 kV EiceDRIVER ecosystem with insulation capability. Production of the Easy 3B (DF4-19MR20W3M1HF_B11), a 4-circuit power supply module that acts as an MPPT stage on a 1500 V PV string inverter, is scheduled for Q3 2022, with a 62 mm module in a half-bridge configuration (3 , 4, 6 mΩ), which follow in the fourth quarter of 2022. Discrete devices using the latest award-winning .XT interconnect technology will be available by the end of 2022. More information can be found at www. infineon.com/CoolSiC.

Infineon on PCIM 2022

At PCIM 2022, Infineon will present innovative product solutions to a system of applications that are set to power the world and shape the future. Representatives of the company also hold several presentations at the PCIM Conference and Industry & E-Mobility Forum with live and on-demand video presentations, followed by discussions with speakers. “Experience the difference in power” at Infineon booth № 412 in Hall 7 (10-12 May 2022, Nuremberg / Germany). Information on the highlights of the PCIM show is available at www.infineon.com/pcim.

More information on Infineon’s contribution to energy efficiency: www.infineon.com/green-energy

Infineon expands CoolSiC™ portfolio, 2 kV voltage class to enable simple, high-power density solutions for 1500 VDC applications

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