Innoscience Technology, a company founded to create a global energy ecosystem based on high-performance and low-cost gallium nitride energy solutions on silicon (GaN-on-Si), will exhibit for the first time in Europe at the world’s largest Power Electronics Conference , PCIM Europe – 10 – 12 May 2022, Nuremberg Messe, Nuremberg, Germany.

Dr. Dennis Marcon, General Manager, Innoscience Europe, has been selected to speak at this prestigious international event. The title of his presentation is:

Removing the last barriers to the widespread adoption of GaN-based power transistors

12:30 – 12:50, May 10, 2022, Industrial Forum, Stand 6-246

He commented: “Many electronic engineers have already realized the benefits of using GaN-based transistors in their systems, as they can make more efficient, more compact, lighter and even more reliable power electronic systems using GaN -based transistors in terms of what is possible with traditional silicon devices. However, there are two barriers that need to be overcome for the widespread use of GaN technology: high cost and security of supply (ie mass production).

“In this talk, we will present Innoscience’s 8-inch GaN-on-Si e-mode technology and discuss how we have overcome the aforementioned barriers to the widespread deployment of GaN-based transistors. We will end the conversation by reviewing the applications where InnoGaN Ga (InnoGaN Ga) GaN devices are used and the benefits of using InnoGaN тран transistors instead of traditional silicon devices.

Innoscience will also be on display at booth 7-249, showcasing its unique high and low voltage GaN solutions in applications. The company is the world’s largest manufacturer of integrated devices (IDM), focused entirely on GaN technology, with a monthly capacity of 10,000 8-inch plates per month (WPM). This capacity is expected to increase to 70,000 WPM by 2025.

In addition, visitors to the Innoscience booth will be able to see designs made in partnership with specialized gateway management companies Heyday and MindCet. Innoscience’s GaN HEMT devices can, of course, be used in conjunction with other gate drivers. The company’s devices range from 30V to 650V and are widely used in applications from USB PD chargers / adapters to data centers, mobile phones and LED drivers.

Dr Marcon added: “We are excited to welcome visitors to PCIM, the first public showcase of Innoscience in Europe. We will demonstrate the huge capacity we already have – the largest in the world – and the wide portfolio of devices available now. Innoscience also has the ability to quickly design and manufacture in large volumes to support customer requirements wherever they are worldwide. ”

For more information visit

Innoscience debuts in Europe at PCIM Europe as: ‘World’s Largest 8-inch GaN-on-Si device manufacturer’

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