Innoscience Technology, a founded company to create a global energy ecosystem based on high-performance, low-cost gallium nitride-on-silicon (GaN-on-Si) power solutions, today announced the Bi-GaN series of bi-directional GaN HEMT devices that save space and facilitate fast charging without suffer from reliability-limiting and potentially dangerous temperature spikes that can sometimes be seen in traditional silicon devices. Innoscience also revealed that leading consumer electronics and mobile communications company, OPPO, is using the new BiGaN devices in its phone to control battery charging and discharging currents. This is the first time such protection based on GaN technology has been incorporated into the phone itself – previously the circuitry had to be built into the charger.
Until recently, silicon MOSFET transistors were used as power switches in mobile phones. However, these traditional devices not only take up a significant amount of space on the main PCB of the mobile phone, where every millimeter counts, but can also lead to a significant increase in temperature and loss of power during fast charging. InnoGaN has advantageous features such as high frequency, high efficiency and low resistance, which are vital for efficient charging.
Thanks to InnoGaN’s low RDS (included), the fact that there are no parasitic diodes, and the unique bidirectional characteristic of Innoscience’s BiGaN technology, a BiGaN HEMT can be used to replace series-connected NMOS MOSFETs in a common-source configuration to achieve bidirectional switching of battery charge and discharge currents . This reduces on-state resistance by 50%, chip size by 70% and temperature rise by 40%.
The first BiGaN device generally released by Innoscience is the INN040W0488, a 40V bidirectional GaN-on-silicon HEMT in a 2.1mm x 2.1mm WLCSP package. The chip supports bidirectional switching with an on-state resistance of up to 4.8 mΩ. BiGaN targets applications such as surge protection circuits for smartphone charging, high-load switching circuits, and switching circuits for multi-power systems. Innoscience is also working to expand the bidirectional family for lower on-state resistance as well as higher voltages.
At the recent UFCS technical workshop at the 1st Plug Conference of Guangdong, OPPO confirmed that it is using Innoscience’s BiGaN HEMTs in phones, making it the first mobile phone manufacturer in the world to use BiGaN as a load switch in direct charging. The BiGaN products, OPPO said, not only save valuable space inside the phone, but also reduce the phone’s temperature rise during charging. This maintains a more comfortable temperature during fast charging, extends the possible duration of fast charging and provides a better user experience. OPPO also announced that bi-directional BiGaN technology will also be adopted in future mass production mobile phone models. This is a significant development for the smartphone industry and the first time GaN technology has entered a mobile phone.
Comments Yi Sun, Senior Vice President of Product Development at Innoscience: “The implementation of BiGaN products in smartphones marks the arrival of a new era for GaN. We are delighted and really happy that OPPO has announced that they are using our innovative bi-directional HEMTs in their integrated fast charging circuit. We look forward to further collaboration to deliver solutions that deliver advanced performance.”
Innoscience’s Bi-GaN bi-directional GaN HEMTs used inside smartphones save space, increase efficiency and lower temperature rise