The new device offers 60% less packaging, improved performance and reduced losses

onsemi (Nasdaq: ON), a leader in intelligent power and sensor technology, today announced the world’s first TO-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET at PCIM Europe. The transistor meets the rapidly growing need for high-performance switching devices that are suitable for projects with high power density levels. Until recently, SiC devices came in D2PAK 7-pin packages, which required significantly more space.

With dimensions of just 9.90 mm x 11.68 mm, the TOLL package offers 30% PCB space savings over the D2PAK package. And with a profile of only 2.30 mm, it takes up 60% less volume than the D2PAK package.

In addition to its smaller size, the TOLL package offers better thermal performance and lower package inductance (2 nH) than the D2PAK 7-pin. Its Kelvin source configuration provides lower gate noise and lower switching losses – including a 60% reduction in power-on loss (EON) compared to a device without a Kelvin configuration, providing significant improvements in efficiency and power density in challenging power designs. such as improved EMI and easier PCB design.

“The ability to deliver highly reliable power supplies in a small space is becoming a competitive advantage in many areas, including industrial, high-performance power supplies and server applications,” said Asif Giaquani, Senior Vice President and General Manager, Advanced Power Division, onsemi. “Packaging our best-in-class SiC MOSFETs in the TOLL package not only reduces space, but improves performance in many areas such as EMI and reduces losses. The result is an extremely reliable and robust, high-performance switching device that will help energy designers meet their stringent power design challenges. “

SiC devices offer significant advantages over their silicon predecessors, including increased efficiency at high frequencies, lower EMI, higher temperature operation, and greater reliability. onsemi is the only provider of silicon carbide solutions with the ability for vertical integration, including SiC boule growth, substrate, epitaxy, device manufacturing, best-in-class integrated modules and discrete package solutions.

The first SiC MOSFET available in the TOLL package is the NTBL045N065SC1, which is designed for demanding applications, including switching power supplies (SMPS), server and telecommunications power supplies, solar inverters, uninterruptible power supplies (UPS) and energy storage. The device is suitable for designs that must meet the most challenging performance standards, including ErP and 80 PLUS Titanium.

NTBL045N065SC1 has a VDSS rating of 650 V with a typical RDS (on) of only 33 mΩ and a maximum leakage current (ID) of 73 A. Based on Wide Band SiC (WBG) technology, the device has a maximum operating temperature of 175 ° C and ultra-low door charge (QG (tot) = 105 nC), which significantly reduces switching losses. In addition, the TOLL package is rated and guaranteed with MSL 1 (moisture sensitivity level 1) to ensure that the mass production failure rate is reduced.

In addition, onsemi offers car-class devices with TO-247 3, 4 and D2PAK 7 packages.

onsemi Unveils World’s First TOLL-packaged 650 V Silicon Carbide MOSFET

Previous articleAnalyze the limitations of Russia’s EW capabilities in Ukraine
Next articleThe EEOC Union condemns the Agency’s unilateral decision to return to office