STMicroelectronics STPOWER MDmesh M9 and DM9 N-channel super-transient multi-channel silicon MOSFETs are ideal for switching power supplies (SMPS) in applications from data center servers and 5G infrastructure to flat panel TVs.

The first devices to be launched are 650V STP65N045M9 and 600V STP60N043DM9. Both have very low resistance (RDS (included)) per unit area, which maximizes power density and allows compact system dimensions. Everyone has the best maximum RDS (included) (RDS (on) max) in its category, at 45mΩ for STP65N045M9 and 43mΩ for STP60N043DM9. With very low gate charge (Qg), usually 80nC at 400V leakage voltage, these devices have the best RDS (on) max x Qg figure of merit (FoM), currently available.

Gate threshold voltage (VGS (th)), typically 3.7V for STP65N045M9 and 4.0V for STP60N043DM9, minimizes both on and off losses compared to earlier MDmesh M5 and M6 / DM6. The MDmesh M9 and DM9 series also have a very low recovery charge (Qrr) and recovery time (trr), which further contribute to improved switching efficiency and performance.

Another feature of ST’s latest high-voltage MDmesh technology is an additional platinum diffusion process that provides a fast internal diode to the body. The peak slope of the diode recovery (dv / dt) is greater than in earlier processes. All devices belonging to the MDmesh DM9 technology are extremely strong and can withstand dv / dt up to 120V / ns at 400V.

ST’s new MDmesh M9 and DM9 devices, STP65N045M9 and STP60N043DM9, both in the TO-220 power pack, are already in production and will be available from distributors by the end of the second quarter of 2022.

Reprinted with permission.

https://www.powerelectronicsnews.com/new-mdmesh-mosfets-raise-power-density/

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